IRFB4510PBF Datasheet, PDF (4/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB4510PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
70
60
50
40
30
20
10
0
25
50
75
100 125 150 175
TJ, Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec ^100μsec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
600
ID
500
TOP 4.7A
12A
BOTTOM 37A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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