IRFB4510PBF Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 97772
IRFB4510PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D
V_DSS
100V
R_DS(on) typ. 10.7m_Ω
max. 13.5mΩ
S
I_{D (Silicon Limited)}
62A
D
DS
G
TO-220AB
IRFB4510PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
d Single Pulse Avalanche Energy
I_AR
E_AR
Avalanche Current
f Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
i Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient, TO-220
www.irf.com
Max.
62
44
250
140
0.95
± 20
3.2
-55 to + 175
300
x x 10lb in (1.1N m)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
4/10/12