IRFB4332PBF Datasheet, PDF (4/8 Pages) International Rectifier – PDP SWITCH

IRFB4332PbF
1400
1200
1000
L = 220nH
C= 0.3µF
C= 0.2µF
C= 0.1µF
800
600
400
200
0
25
50
75
100
125
150
Temperature (°C)
Fig 7. Typical E_PULSE vs.Temperature
10000
8000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000 ^Ciss
1000
100
TJ = 175°C
10
1
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
20
ID= 35A
16
12
VDS= 200V
VDS= 125V
VDS= 50V
4000
8
Coss
2000
4
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
0
0
40
80
120
160
QG Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60
50
40
30
20
10
0
25
50
75
100 125 150 175
TJ, Junction Temperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1µsec
100µsec
10µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 12. Maximum Safe Operating Area
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