|
IRFB4332PBF Datasheet, PDF (2/8 Pages) International Rectifier – PDP SWITCH | |||
|
◁ |
IRFB4332PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250 âââ âââ V VGS = 0V, ID = 250µA
âÎVDSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ 170 âââ mV/°C Reference to 25°C, ID = 1mA
âââ 29 33 m⦠VGS = 10V, ID = 35A e
VGS(th)
Gate Threshold Voltage
3.0 âââ 5.0
V VDS = VGS, ID = 250µA
âVGS(th)/âTJ
Gate Threshold Voltage Coefficient
âââ -14 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 250V, VGS = 0V
âââ âââ 1.0 mA VDS = 250V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
100 âââ âââ
âââ 99 150
S VDS = 25V, ID = 35A
nC VDD = 125V, ID = 35A, VGS = 10Ve
Qgd
Gate-to-Drain Charge
âââ 35 âââ
tst
Shoot Through Blocking Time
100 âââ âââ ns VDD = 200V, VGS = 15V, RG= 4.7â¦
EPULSE
Energy per Pulse
âââ 520 âââ
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 200V, RG= 5.1â¦, TJ = 25°C
âââ 920 âââ
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1â¦, TJ = 100°C
Ciss
Input Capacitance
âââ 5860 âââ
VGS = 0V
Coss
Output Capacitance
âââ 530 âââ pF VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 130 âââ
Æ = 1.0MHz,
Coss eff.
Effective Output Capacitance
âââ 360 âââ
VGS = 0V, VDS = 0V to 200V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
G
âââ 7.5 âââ
from package
and center of die contact
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ.
Max.
Units
âââ
230
mJ
âââ
39
mJ
300
âââ
V
âââ
35
A
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
190
820
Max. Units
Conditions
60
MOSFET symbol
A showing the
230
integral reverse
p-n junction diode.
1.3
V TJ = 25°C, IS = 35A, VGS = 0V e
290 ns TJ = 25°C, IF = 35A, VDD = 50V
1230 nC di/dt = 100A/µs e
2
www.irf.com
|
▷ |