IRFB4310GPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB4310GPbF
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
140
120
Limited By Package
100
80
60
40
20
0
25 50 75 100 125 150 175
Fig 9. ^TM^Ca^,x^Ci^am^su^e m^TemD^pra^eri^an^tuC^reu⁽r^°r^Ce⁾nt vs.
Case Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
DC
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
120
115
110
105
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
2400
2000
1600
ID
TOP
12A
17A
BOTTOM 75A
1200
800
400
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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