IRFB4310GPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB4310GPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
100
–––
–––
–––
0.064
5.6
–––
–––
7.0
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 1mA
g _mΩ V_GS = 10V, I_D = 75A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
––– ––– 20 µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 100V, V_GS = 0V, T_J = 125°C
––– ––– 200 nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 1.4 ––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
160 ––– –––
Q_g
Total Gate Charge
––– 170 250
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 46 –––
––– 62 –––
t_d(on)
Turn-On Delay Time
t_r
Rise Time
––– 26 –––
––– 110 –––
t_d(off)
Turn-Off Delay Time
––– 68 –––
t_f
Fall Time
C_iss
Input Capacitance
––– 78 –––
––– 7670 –––
C_oss
Output Capacitance
––– 540 –––
C_rss
Reverse Transfer Capacitance
––– 280 –––
i ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 650 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 720.1 –––
S V_DS = 50V, I_D = 75A
nC I_D = 75A
g ^{VDS = 80V}
V_GS = 10V
ns V_DD = 65V
I_D = 75A
g ^{RG = 2.6Ω}
V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
i V_GS = 0V, V_DS = 0V to 80V , See Fig.11
h V_GS = 0V, V_DS = 0V to 80V , See Fig. 5
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 130 A MOSFET symbol
D
showing the
––– ––– 550
integral reverse
G
––– ––– 1.3
g ^{p-n junction diode.}
V T_J = 25°C, I_S = 75A, V_GS = 0V
S
––– 45 68 ns T_J = 25°C
V_R = 85V,
––– 55 83
T_J = 125°C
––– 82 120 nC T_J = 25°C
g ^{IF = 75A}
di/dt = 100A/µs
––– 120 180
T_J = 125°C
––– 3.3 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.35mH
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
above this value.
„ I_SD ≤ 75A, di/dt ≤ 550A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
recommended footprint and soldering techniques refer to
application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
2
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