IRFB4212PBF_15 Datasheet, PDF (4/8 Pages) International Rectifier – Key parameters optimized for Class-D audio amplifier applications

IRFB4212PbF
100.0
10.0
TJ = 175°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20
16
12
8
4
0
25
50
75
100 125 150 175
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse DC
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
4.0
ID = 250µA
3.0
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1 ^{D = 0.50}
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R_4R4
τ_Cτ
Ri (°C/W)
0.0489
0.3856
τi (sec)
0.00000
0.000062
τ_{4 τ4}
1.3513 0.001117
0.7140 0.013125
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com