IRFB4212PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Key parameters optimized for Class-D audio amplifier applications

IRFB4212PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
I_GSS
g_fs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
R_G(int)
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
L_D
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.09 ––– V/°C Reference to 25°C, I_D = 1mA
e ––– 58 72.5 mΩ V_GS = 10V, I_D = 13A
3.0 ––– 5.0
V V_DS = V_GS, I_D = 250µA
––– -13 ––– mV/°C
––– ––– 20 µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 100V, V_GS = 0V, T_J = 125°C
––– ––– 200 nA V_GS = 20V
––– ––– -200
V_GS = -20V
11 ––– ––– S V_DS = 50V, I_D = 13A
––– 15 23
––– 3.3 –––
V_DS = 80V
––– 1.4 ––– nC V_GS = 10V
––– 6.9 –––
I_D = 13A
––– 3.4 –––
See Fig. 6 and 19
––– 8.3 –––
––– 2.2 –––
––– 7.7 –––
––– 28 –––
––– 14 –––
––– 3.9 –––
Ω
Ãe V_DD = 50V, V_GS = 10V
I_D = 13A
ns R_G = 2.5Ω
––– 550 –––
––– 66 –––
––– 35 –––
V_GS = 0V
pF V_DS = 50V
ƒ = 1.0MHz,
See Fig.5
––– 350 –––
––– 4.5 –––
V_GS = 0V, V_DS = 0V to 80V
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
G
––– 7.5 –––
from package
S
and center of die contact
Avalanche Characteristics
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
E_AR
Ãg Avalanche Current
g Repetitive Avalanche Energy
Typ.
Max.
–––
25
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S @ T_C = 25°C Continuous Source Current
––– ––– 18
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
––– ––– 57
––– ––– 1.3
integral reverse
p-n junction diode.
e V T_J = 25°C, I_S = 13A, V_GS = 0V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– 41
62
ns T_J = 25°C, I_F = 13A
e ––– 69 100 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T_J = 25°C, L = 0.32mH, R_G = 25Ω, I_AS = 13A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ R_θ is measured at T_J of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
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