IRFB4020PBF Datasheet, PDF (4/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

IRFB4020PbF
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125 150 175
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Junction Temperature
10
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
1
100µsec
0.1
0.01 ^{Tc = 25°C}
Tj = 175°C
Single Pulse
0.001
1
10
DC
1msec
10msec
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
4.0
ID = 100µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
τ_{J τJ}
τ_{1 τ1}
R_1R1
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
R_4R4
τ_Cτ
Ri (°C/W)
0.0283
0.3659
τi (sec)
0.000007
0.000140
τ_{4 τ4}
0.7264 0.001376
0.01
SINGLE PULSE
Ci= τi/Ri
Ci i/Ri
0.3093 0.007391
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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