IRFB4020PBF Datasheet, PDF (2/7 Pages) International Rectifier – DIGITAL AUDIO MOSFET

IRFB4020PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
200 ––– ––– V V_GS = 0V, I_D = 250µA
e ^{––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA}
––– 80 100 ^mΩ V_GS = 10V, I_D = 11A
3.0 ––– 4.9
V V_DS = V_GS, I_D = 100µA
––– -13 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA V_DS = 200V, V_GS = 0V
––– ––– 250
V_DS = 200V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
g_fs
Forward Transconductance
24 ––– ––– S V_DS = 50V, I_D = 11A
Q_g
Total Gate Charge
––– 18 29
Q_gs1
Q_gs2
Q_gd
Q_godr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 4.5 –––
V_DS = 100V
––– 1.4 ––– nC V_GS = 10V
––– 5.3 –––
I_D = 11A
––– 6.8 –––
See Fig. 6 and 18
Q_sw
Switch Charge (Q_gs2 + Q_gd)
––– 6.7 –––
R_G(int)
t_d(on)
t_r
t_d(off)
t_f
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 3.2 –––
––– 7.8 –––
Ω
Ãe V_DD = 100V, V_GS = 10V
––– 12 –––
I_D = 11A
––– 16 ––– ns R_G = 2.4Ω
––– 6.3 –––
C_iss
Input Capacitance
––– 1200 –––
V_GS = 0V
C_oss
Output Capacitance
––– 91 ––– pF V_DS = 50V
C_rss
Reverse Transfer Capacitance
––– 20 –––
ƒ = 1.0MHz,
See Fig.5
C_oss eff.
L_D
Effective Output Capacitance
Internal Drain Inductance
––– 110 –––
V_GS = 0V, V_DS = 0V to 160V
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ãg Avalanche Current
g Repetitive Avalanche Energy
Typ.
Max.
–––
94
See Fig. 14, 15, 16a, 16b
Units
mJ
A
mJ
Diode Characteristics
Parameter
I_S @ T_C = 25°C Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
82
280
Max. Units
Conditions
18
MOSFET symbol
A showing the
52
integral reverse
p-n junction diode.
1.3
e V T_J = 25°C, I_S = 11A, V_GS = 0V
120
420
e ^{ns TJ = 25°C, IF = 11A}
nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T_J = 25°C, L = 1.62mH, R_G = 25Ω, I_AS = 11A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
„ R_θ is measured at T_J of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
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