IRFB3507PBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET®Power MOSFET

IRFB/S/SL3507PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
100
Limited By Package
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
100
1msec
10
10msec
1
DC
0.1 ^{Tc = 25°C}
Tj = 175°C
Single Pulse
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 8.9A
12A
BOTTOM 58A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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