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IRFB3507PBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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IRFB/S/SL3507PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Input Resistance
75
âââ
âââ
âââ
0.070
7.0
âââ
âââ
8.8
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 1mA
g m⦠VGS = 10V, ID = 58A
2.0 âââ 4.0 V VDS = VGS, ID = 100µA
âââ âââ 20 µA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 75V, VGS = 0V, TJ = 125°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 1.3 âââ ⦠f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
86 âââ âââ
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
âââ 88 130
âââ 24 âââ
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
âââ 36 âââ
âââ 20 âââ
tr
Rise Time
âââ 81 âââ
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 52 âââ
âââ 49 âââ
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 3540 âââ
âââ 340 âââ
Crss
Reverse Transfer Capacitance
âââ 210 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ 460 âââ
h Coss eff. (TR) Effective Output Capacitance (Time Related) âââ 520 âââ
S VDS = 50V, ID = 58A
nC ID = 58A
g VDS = 60V
VGS = 10V
ns VDD = 48V
ID = 58A
g RG = 5.6â¦
VGS = 10V
pF VGS = 0V
VDS = 50V
Æ = 1.0MHz
i VGS = 0V, VDS = 0V to 60V , See Fig.11
h VGS = 0V, VDS = 0V to 60V , See Fig. 5
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
 âââ âââ 97
A MOSFET symbol
D
showing the
âââ âââ 390 A integral reverse
G
âââ âââ 1.3
p-n junction diode.
S
g V TJ = 25°C, IS = 58A, VGS = 0V
âââ 37 56 ns TJ = 25°C
VR = 64V,
âââ 45 68
TJ = 125°C
âââ 32 48 nC TJ = 25°C
g IF = 58A
di/dt = 100A/µs
âââ 51 77
TJ = 125°C
âââ 1.7 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction  Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.17mH,
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25â¦, IAS = 58A, VGS =10V. Part not recommended for use
mended footprint and soldering techniques refer to application note #AN-994.
above this value.
 Rθ is measured at TJ approximately 90°C.
 ISD ⤠58A, di/dt ⤠390A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
2
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