IRFB3256PBF Datasheet, PDF (4/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB3256PbF
1000
100 ^{TJ = 175°C}
10
TJ = 25°C
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
200
Limited by package
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
10
10msec
1 _{Tc = 25°C}
DC
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
72
ID = 1.0mA
70
68
66
64
62
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 12A
24A
BOTTOM 75A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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