IRFB3256PBF Datasheet, PDF (2/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB3256PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
R_G
Internal Gate Resistance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
60
–––
–––
2.0
88
–––
–––
–––
–––
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)} –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)} –––
Typ.
–––
29
2.7
–––
–––
0.79
–––
–––
–––
–––
Typ.
130
31
42
88
22
77
55
64
6600
720
400
1080
1400
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250μA
™ ––– mV/°C Reference to 25°C, I_D = 1.0mA
f 3.4 _mΩ V_GS = 10V, I_D = 75A
4.0 V V_DS = V_GS, I_D = 150μA
––– S V_DS = 25V, I_D = 75A
––– Ω
20
250
100
-100
μA V_DS = 60V, V_GS = 0V
V_DS = 60V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
Max. Units
Conditions
195 nC I_D = 75A
–––
–––
f ^{VDS = 30V}
V_GS = 10V
–––
I_D = 75A, V_DS =0V, V_GS = 10V
––– ns V_DD = 39V
–––
I_D = 75A
–––
–––
f ^{RG = 2.7Ω}
V_GS = 10V
––– pF V_GS = 0V
–––
V_DS = 48V
–––
–––
–––
ƒ = 1.0 MHz, See Fig. 5
h V_GS = 0V, V_DS = 0V to 48V
g V_GS = 0V, V_DS = 0V to 48V
, See Fig. 11
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ãd ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 206 A MOSFET symbol
D
showing the
––– ––– 820 A integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 43 ––– ns T_J = 25°C
V_R = 51V,
––– 53 –––
T_J = 125°C
––– 58 ––– nC T_J = 25°C
f ^{IF = 75A}
di/dt = 100A/μs
––– 65 –––
T_J = 125°C
––– 2.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.12mH
R_G = 50Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
above this value.
ƒ I_SD ≤ 75A, di/dt ≤ 890A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging
time as C_oss while V_DS is rising from 0 to 80% V_DSS.
2
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ R_θ is measured at T_J approximately 90°C.
ˆ R_θJC value shown is at time zero.
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