IRFB31N20D Datasheet, PDF (4/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

IRFB/IRFS/IRFSL31N20D
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 18A
16
12
V_DS = 160V
V_DS = 100V
V_DS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 175°C
Single Pulse
1
1
10
10ms
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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