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| IRFB31N20D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) | |||
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IRFB/IRFS/IRFSL31N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ âââ
0.25 âââ
âââ 0.082
âââ 5.5
âââ 25
âââ 250
âââ 100
âââ -100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
17 âââ âââ S VDS = 50V, ID = 18A
âââ 70 110
ID = 18A
âââ 18 27
âââ 33 49
nC VDS = 160V
VGS = 10V, Â
âââ 16 âââ
VDD = 100V
âââ 38 âââ ns ID = 18A
âââ 26 âââ
RG = 2.5â¦
âââ 10 âââ
RD = 5.4⦠Â
âââ 2370 âââ
VGS = 0V
âââ 390 âââ
VDS = 25V
âââ 78 âââ pF Æ = 1.0MHz
âââ 2860 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 150 âââ
âââ 170 âââ
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
420
18
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.50
âââ
âââ
0.75
âââ
°C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 31
A showing the
integral reverse
G
âââ âââ 124
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.3 V TJ = 25°C, IS = 18A, VGS = 0V Â
âââ 200 300 ns TJ = 25°C, IF = 18A
âââ 1.7 2.6 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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