IRFB23N15DPBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET®Power MOSFET

IRFB/IRFS/IRFSL23N15DPbF
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 14A}
16
12
V_DS = 120V
V_DS = 75V
V_DS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 175° C
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25° C
T_J = 175° C
Single Pulse
1
1
10
10ms
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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