IRFB23N15DPBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET®Power MOSFET

PD - 95535
SMPS MOSFET
IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
HEXFET^® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
V_DSS R_DS(on) max
I_D
150V
0.090Ω
23A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB23N15D
D²Pak
TO-262
IRFS23N15D IRFSL23N15D
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
23
17
92
3.8
136
0.9
± 30
4.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Units
A
W
W/°C
V
V/ns
°C
Notes  through ‡ are on page 11
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1
7/20/04