IRFB18N50KPBF Datasheet, PDF (4/8 Pages) International Rectifier – SMPS MOSFET

IRFB18N50KPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 17A}
16
V_DS= 400V
V_DS= 250V
V_DS= 100V
12
8
4
0
0
30
60
90
120
150
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
1
T_J = 25° C
0.1
0.2
V _GS = 0 V
0.5
0.8
1.1
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C= 25 °C
T_J = 150 °C
Single Pulse
0.1
10
100
1000
10000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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