IRFB18N50KPBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET

IRFB18N50KPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
I_GSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.59 ––– V/°C Reference to 25°C, I_D = 1mA
––– 0.26 0.29 Ω V_GS = 10V, I_D = 10A „
3.0 ––– 5.0 V V_DS = V_GS, I_D = 250µA
––– ––– 50 µA V_DS = 500V, V_GS = 0V
––– ––– 250 µA V_DS = 400V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA V_GS = 30V
––– ––– -100
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
g_fs
Forward Transconductance
6.4 ––– –––
Q_g
Total Gate Charge
––– ––– 120
Q_gs
Gate-to-Source Charge
––– ––– 34
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 54
t_d(on)
Turn-On Delay Time
––– 22 –––
t_r
Rise Time
––– 60 –––
t_d(off)
Turn-Off Delay Time
––– 45 –––
t_f
Fall Time
––– 30 –––
C_iss
Input Capacitance
––– 2830 –––
C_oss
Output Capacitance
––– 330 –––
C_rss
Reverse Transfer Capacitance
––– 38 –––
C_oss
Output Capacitance
––– 3310 –––
C_oss
Output Capacitance
––– 93 –––
C_oss eff. Effective Output Capacitance
––– 155 –––
Units
S
nC
ns
pF
Conditions
V_DS = 50V, I_D = 10A
I_D = 17A
V_DS = 400V
V_GS = 10V, See Fig. 6 and 13 „
V_DD = 250V
I_D = 17A
R_G = 7.5Ω
V_GS = 10V,See Fig. 10 „
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 400V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 400V …
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 17
A ^{showing the}
integral reverse
G
––– ––– 68
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 17A, V_GS = 0V „
––– 520 780 ns T_J = 25°C, I_F = 17A
––– 5.3 8.0 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T_J = 25°C, L = 2.5mH, R_G = 25Ω,
I_AS = 17A,
ƒ I_SD ≤ 17A, di/dt ≤ 376A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
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