IRFB17N20D Datasheet, PDF (4/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)

IRFB/IRFS/IRFSL17N20D
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 9.8A
16
12
V_DS = 160V
V_DS = 100V
V_DS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 175° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.5
0.8
1.1
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25° C
T_J = 175° C
Single Pulse
0.1
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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