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| IRFB17N20D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) | |||
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IRFB/IRFS/IRFSL17N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200 âââ âââ V
âââ 0.25 âââ V/°C
âââ âââ 0.17 â¦
3.0 âââ 5.5 V
âââ âââ 25 µA
âââ âââ 250
âââ âââ 100
nA
âââ âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 9.8A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
5.3 âââ âââ
âââ 33 50
âââ 8.4 13
âââ 16 24
âââ 11 âââ
âââ 19 âââ
âââ 18 âââ
âââ 6.6 âââ
âââ 1100 âââ
âââ 190 âââ
âââ 44 âââ
âââ 1340 âââ
âââ 76 âââ
âââ 130 âââ
S VDS = 50V, ID = 9.8A
ID = 9.8A
nC VDS = 160V
VGS = 10V, ÂÂ
VDD = 100V
ns ID = 9.8A
RG = 5.1â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHzÂ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
240
9.8
14
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
1.1
0.50
âââ
°C/W
âââ
62
âââ
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
MOSFET symbol
D
âââ âââ 16
A showing the
âââ âââ 64
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
âââ âââ 1.3 V TJ = 25°C, IS = 9.8A, VGS = 0V Â
âââ 160 240 ns TJ = 25°C, IF = 9.8A
âââ 900 1350 nC di/dt = 100A/µs Â
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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