IRFB13N50A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

IRFB13N50A
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
 12
I^D = 14A
10
 ^{VDS = 400V}
V_DS = 250V
V_DS = 100V
7
5
2
0
0
12
24
36
48
60
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
 T_J= 150 °C
10
 T_J = 25 ^°C
1
0.1
0.2
 V _GS = 0 V
0.5
0.8
1.1
1.4
V _SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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