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| IRFB13N50A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A) | |||
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IRFB13N50A
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.55 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 0.450 ⦠VGS = 10V, ID = 8.4A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
8.1 âââ âââ S VDS = 50V, ID = 8.4A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ âââ 81
ID = 14A
âââ âââ 20 nC VDS = 400V
âââ âââ 36
VGS = 10V, See Fig. 6 and 13 Â
âââ 15 âââ
VDD = 250V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 39 âââ ns ID = 14A
âââ 39 âââ
RG = 7.5â¦
âââ 31 âââ
VGS = 10V,See Fig. 10 Â
âââ 1910 âââ
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 290 âââ
VDS = 25V
âââ 11 âââ pF Æ = 1.0MHz, See Fig. 5
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 2730 âââ
âââ 82 âââ
âââ 160 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
iRRM
Reverse RecoveryCurrent
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 5.7mH, RG = 25â¦,
IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a)
 ISD ⤠14A, di/dt ⤠250A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 14
A showing the
integral reverse
G
âââ âââ 56
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 14A, VGS = 0V Â
âââ 370 550 ns TJ = 125°C, IF = 14A
âââ 4.4 6.5 µC di/dt = 100A/µs Â
âââ 21 31 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
2
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