IRF9Z24NSTRR Datasheet, PDF (4/11 Pages) International Rectifier – Advanced Process Technology

IRF9Z24NS/L
700
600
500
400
300
200
100
0
1
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
C _oss = C _ds + C _gd
C iss
C oss
Crss
10
V _DS , Drain-to-Source Voltage (V)
A
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -7.2A
16
V _DS = -44V
V _DS = -28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 15 0°C
10
T_J = 2 5°C
1
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10µs
10
100µs
1m s
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
10m s
A
100
-V_DS , D rain-to-S ourc e V oltage (V )
Fig 8. Maximum Safe Operating Area
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