IRF9540NSTRRPBF Datasheet, PDF (4/11 Pages) International Rectifier – Advanced Process Technology

IRF9540NS/L
3000
2500
2000
1500
1000
500
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
Ciss
Coss
Crss
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{I D = -11A}
16
12
V_DS = -80V
V_DS = -50V
V_DS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
100
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
T_J = 175°C
1
T_J = 25°C
0.1
0.2
VGS = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100µs
10
1ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
10ms
1
10
100
-V_DS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area