IRF9540NSTRRPBF Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology

IRF9540NS/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-100 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.11 ––– V/°C Reference to 25°C, I_D = -1mA…
––– ––– 0.117 Ω V_GS = -10V, I_D = -11A „
-2.0 ––– -4.0 V V_DS = V_GS, I_D = -250µA
5.3 ––– ––– S V_DS = -50V, I_D = -11A…
––– ––– -25 _µA V_DS = -100V, V_GS = 0V
––– ––– -250
V_DS = -80V, V_GS = 0V, T_J = 150°C
––– ––– 100 _{n A} V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 97
I_D = -11A
––– ––– 15 nC V_DS = -80V
––– ––– 51
V_GS = -10V, See Fig. 6 and 13 „…
––– 15 –––
V_DD = -50V
––– 67 ––– _ns I_D = -11A
––– 51 –––
R_G = 5.1Ω
––– 51 –––
R_D = 4.2Ω, See Fig. 10 „
–––
7.5 ^–––
nH
Between lead,
and center of die contact
––– 1300 –––
V_GS = 0V
––– 400 ––– pF V_DS = -25V
––– 240 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I _SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -23
A
showing the
integral reverse
G
––– ––– -76
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -11A, V_GS = 0V „
––– 150 220 ns T_J = 25°C, I_F = -11A
––– 830 1200 nC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting T_J = 25°C, L = 7.1mH
R_G = 25Ω, I_AS = -11A. (See Figure 12)
… Uses IRF9540N data and test conditions
ƒ I_SD ≤ -11A, di/dt ≤ -470A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.