IRF9530NPBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

IRF9530NPbF
2000
1600
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
1200
800
400
Ciss
Coss
Crss
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -8.4A}
15
V_DS =-80V
V_DS =-50V
V_DS =-20V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150°C
10
T_J = 25°C
1
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
10ms
100
1000
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area