IRF9530NPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

IRF9530NPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min.
-100
–––
–––
-2.0
3.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.11 –––
––– 0.20
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 58
––– 8.3
––– 32
15 –––
58 –––
45 –––
46 –––
4.5 –––
7.5 –––
760 –––
260 –––
170 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -10V, I_D = -8.4A „
V_DS = V_GS, I_D = -250µA
V_DS = -50V, I_D = -8.4A
V_DS = -100V, V_GS = 0V
V_DS = -80V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = -8.4A
V_DS = -80V
V_GS = -10V, See Fig. 6 and 13 „
V_DD = -50V
I_D = -8.4A
R_G = 9.1Ω
R_D = 6.2Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -14
MOSFET symbol
A ^{showing the}
D
integral reverse
G
––– ––– -56
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -8.4A, V_GS = 0V „
––– 130 190 ns T_J = 25°C, I_F = -8.4A
––– 650 970 nC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 7.0mH
R_G = 25Ω, I_AS = -8.4A. (See Figure 12)
ƒ I_SD ≤ -8.4A, di/dt ≤ -490A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.