IRF9362PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF9362PbF
100
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1.0
0.3
0.5
0.7
0.9
1.1
1.3
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
8
6
4
2
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
DC
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2.2
2.0
1.8
1.6
ID = -25µA
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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