IRF9362PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF9362PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
Drain-to-Source Breakdown Voltage
-30
∆ΒV_DSS/∆T_J
Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
–––
V_GS(th)
Gate Threshold Voltage
-1.3
∆V_GS(th)
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
12
Q_g
h Total Gate Charge
–––
Q_g
h Total Gate Charge
–––
Q_gs
h Gate-to-Source Charge
–––
Q_gd
h Gate-to-Drain Charge
–––
R_G
h Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Avalanche Characteristics
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
™ Avalanche Current
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Thermal Resistance
Parameter
R_θJL
g Junction-to-Drain Lead
R_θJA
f Junction-to-Ambient
Typ.
–––
0.021
17.0
25.7
-1.8
-5.8
–––
–––
–––
–––
–––
13
26
3.8
6.3
17
5.2
5.9
115
53
1300
250
170
Typ.
–––
–––
–––
32
20
Max.
–––
–––
21.0
32.0
-2.4
–––
-1.0
-150
-100
100
–––
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = -250µA
V/°C
mΩ
Reference to 25°C, I_D = -1mA
e V_GS = -10V, I_D = -8.0A
e V_GS = -4.5V, I_D = -6.4A
V V_DS = V_GS, I_D = -25µA
mV/°C
µA ^{VDS = -24V, VGS = 0V}
V_DS = -24V, V_GS = 0V, T_J = 125°C
nA ^{VGS = -20V}
V_GS = 20V
S VDS = -10V, ID = -6.4A
nC VDS = -15V, VGS = -4.5V, ID = - 6.4A
V_GS = -10V
nC VDS = -15V
I_D = -6.4A
Ω
e V_DD = -30V, V_GS = -10V
ns ^{ID = -1.0A}
R_G = 6.0Ω
See Figs. 19a & 19b
V_GS = 0V
pF VDS = -25V
ƒ = 1.0kHz
Typ.
–––
–––
Max.
94
-6.4
Units
mJ
A
Max.
-2.0
-64
-1.2
48
30
Units
Conditions
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
e V T_J = 25°C, I_S = -2.0A, V_GS = 0V
ns T_J = 25°C, I_F = -2.0A, V_DD = -24V
e nC di/dt = 100/µs
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T_J = 25°C, L = 4.6mH, R_G = 25Ω, I_AS = -6.4A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… R_θ is measured at T_J of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
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