IRF9333PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF9333PbF
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse ^DC
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
8
2.0
ID = -25μA
6
4
2
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T _A
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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