IRF9333PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
R_{DS(on) max}
(@V_GS = -10V)
R_{DS(on) max}
(@V_GS = -4.5V)
Q_{g (typical)}
I_D
(@T_A = 25°C)
-30
V
19.4
m:
6
6
32.5
m:
6
*
14
nC
-9.2
A
PD - 97523
IRF9333PbF
HEXFET^® Power MOSFET
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'
'
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SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF933 3Pb F
IRF933 3TRPb F
Package Type
SO8
SO8
Standard Pack
For m
Quantity
Tu be/B ulk
95
Tape and Reel
4 000
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-9.2
-7.3
-75
2.5
1.6
0.02
-55 to + 150
Note
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
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