IRF7862PBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7862PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
5.0
ID= 16A
4.0
3.0
VDS= 24V
VDS= 15V
2.0
1.0
0.0
0
5 10 15 20 25 30 35
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1.0
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1.0
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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