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| IRF7862PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power | |||
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IRF7862PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
âââ
0.023
3.0
3.7
âââ
-5.4
âââ
âââ
âââ
âââ
âââ
âââ
3.3
4.5
2.35
âââ
1.0
150
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
V VDS = VGS, ID = 100µA
mV/°C VDS = VGS, ID = 250µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
87 âââ âââ
âââ 30 45
S VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 7.5 âââ
VDS = 15V
âââ 3.1 âââ nC VGS = 4.5V
âââ 9.8 âââ
ID = 16A
âââ 9.6 âââ
See Figs. 15 & 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 12.9 âââ
Qoss
Output Charge
Rg
Gate Resistance
âââ 18 âââ nC VDS = 16V, VGS = 0V
âââ 1.0 1.6 â¦
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 16 âââ
VDD = 15V, VGS = 4.5V
âââ 19 âââ ns ID = 16A
âââ 18 âââ
RG = 1.8â¦
âââ 11 âââ
See Fig. 18
Ciss
Input Capacitance
âââ 4090 âââ
VGS = 0V
Coss
Output Capacitance
âââ 810 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 390 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
350
16
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
âââ âââ 170
âââ âââ 1.0
âââ 17 26
âââ 33 50
MOSFET symbol
D
A showing the
integral reverse
G
e p-n junction diode.
S
V TJ = 25°C, IS = 16A, VGS = 0V
e ns TJ = 25°C, IF = 16A, VDD = 15V
nC di/dt = 430A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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