IRF7842PBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7842PbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 14A
10
VDS= 30V
VDS= 20V
8
6
4
2
0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 150°C
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10.0
10
1.0
TJ = 25°C
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0
1
10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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Fig 8. Maximum Safe Operating Area
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July 8, 2014