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| IRF7842PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power | |||
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IRF7842PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ÎVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
40
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
81
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.037
4.0
4.7
âââ
- 5.6
âââ
âââ
âââ
âââ
âââ
33
9.6
2.8
10
10.6
12.8
18
1.3
14
12
21
5.0
4500
680
310
Max. Units
Conditions
âââ V VGS = 0V, ID = 250μA
âââ V/°C Reference to 25°C, ID = 1mA
e 5.0 mΩ VGS = 10V, ID = 17A
5.9
e VGS = 4.5V, ID = 14A
2.25 V VDS = VGS, ID = 250μA
âââ mV/°C
1.0
150
100
-100
âââ
50
μA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 20V, ID = 14A
âââ
VDS = 20V
âââ nC VGS = 4.5V
âââ
ID = 14A
âââ
âââ
âââ nC VDS = 16V, VGS = 0V
2.6 Ω
âââ
e VDD = 20V, VGS = 4.5V
âââ
ID = 14A
âââ ns Clamped Inductive Load
âââ
âââ
VGS = 0V
âââ pF VDS = 20V
âââ
Æ = 1.0MHz
Typ.
âââ
âââ
Max.
50
14
Units
mJ
A
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
âââ âââ 140
A showing the
integral reverse
âââ âââ 1.0
p-n junction diode.
e V TJ = 25°C, IS = 14A, VGS = 0V
âââ 99 150 ns TJ = 25°C, IF = 14A, VDD = 20V
âââ 11
17
e nC di/dt = 100A/μs
2
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July 8, 2014
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