IRF7832Z Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7832Z
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 16A
5.0
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 150°C
TJ = 25°C
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10msec
1msec
1
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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