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| IRF7832Z Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7832Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
V GS(th )
âV GS(th )
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
âââ
âââ
âââ
1.35
âââ
âââ
0.023
3.1
3.7
âââ
-5.5
âââ
âââ
3.8
4.5
2.35
âââ
V VGS = 0V, ID = 250µA
V/°C
mâ¦
Reference to 25°C, ID = 1mA
e VGS = 10V, ID = 20A
e VGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
80 âââ âââ
âââ 30 45
S VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 7.9 âââ
VDS = 15V
âââ 2.6 âââ nC VGS = 4.5V
âââ 11 âââ
ID = 16A
âââ 8.5 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 13.6 âââ
Qoss
Rg
Output Charge
Gate Resistance
âââ 19 âââ nC VDS = 16V, VGS = 0V
âââ 1.2 1.9 â¦
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 14 âââ
VDD = 15V, VGS = 4.5V
âââ 15 âââ
ID = 16A
âââ 18 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 5.6 âââ
Ciss
Input Capacitance
âââ 3860 âââ
VGS = 0V
Coss
Output Capacitance
âââ 840 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 370 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
350
16
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 160
integral reverse
G
âââ âââ 1.0
p-n junction diode.
S
e V TJ = 25°C, IS = 16A, VGS = 0V
âââ 16
âââ 29
24
44
e ns TJ = 25°C, IF = 16A, VDD = 15V
nC di/dt = 500A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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