IRF7815PBF Datasheet, PDF (4/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7815PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
14.0
ID= 3.1A
12.0
VDS= 120V
10.0
VDS= 75V
VDS= 30V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.3
VGS = 0V
0.5
0.7
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
10msec
1msec
TA = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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