IRF7815PBF Datasheet, PDF (1/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low R_DS(on) at 10V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
PD - 96284
IRF7815PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
Qg (typ.)
: 150V 43m @V_GS = 10V 25nC
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
f Junction-to-Ambient
Max.
150
± 20
5.1
4.1
41
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
www.irf.com
1
12/01/09