IRF7811WTRPBF Datasheet, PDF (4/6 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

IRF7811WPbF
100
T_J = 150° C
10
T_J = 25°C
1
0.1
2.5
V DS = 15V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
V_GS , Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100
T_J = 150° C
10
T_J = 25° C
1
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
t1
t₂
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁ , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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