IRF7811WTRPBF Datasheet, PDF (2/6 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

IRF7811WPbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BV_DSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
C^Cuu^rr^rr^eeⁿn^t t*
R_DS(on)
V_GS(th)
I
DSS
Min Typ
30 –
9.0
1.0
Max Units
–
V
12 mΩ
V
30
150 µA
Gate-Source Leakage
I_GSS
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Q_G
Q_G
Q_GS1
Post-Vth
Gate-Source Charge
Q_GS2
Gate to Drain Charge
Q_GD
Switch Chg(Q_gs2 + Q_gd)
Q_sw
Output Charge
Q_oss
Gate Resistance
R_G
Turn-on Delay Time
t_{d (on)}
Rise Time
t_r
Turn-off Delay Time
t_{d (off)}
Fall Time
t_f
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance C_rss
±100 nA
22 33
16.3
3.5
1.2
nC
8.8
10.1
12
2.0 4.0 Ω
11
11
ns
29
9.9
– 2335 –
– 400 – pF
– 119 –
Conditions
V_GS = 0V, I_D = 250µA
V_GS = 4.5V, I_D = 15A‚
V_DS = V_GS,I_D = 250µA
V = 24V, V = 0
DS
GS
V_DS = 24V, V_GS = 0,
Tj = 100°C
V_GS = ±12V
V_GS=5.0V, I_D=15A, V_DS=16V
V_GS = 5V, V_DS< 100mV
V_DS = 16V, I_D = 15A, V_GS = 5.0V
V_DS = 16V, V_GS = 0
V_DD = 16V, I_D = 15A
V_GS = 5.0V
Clamped Inductive Load
V_DS = 16V, V_GS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units Conditions
Diode Forward
V_SD
Voltage*
1.25 V
I_S = 15A‚, V_GS = 0V
Reverse Recovery
Q_rr
Charge„
45
nC di/dt ~ 700A/µs
V_DS = 16V, V_GS = 0V, I_S = 15A
Reverse Recovery
Q_rr(s)
41
nC di/dt = 700A/µs
Charge (with Parallel
(with 10BQ040)
Schottky)„
V_DS = 16V, V_GS = 0V, I_S = 15A
Notes: _{ Repetitive rating; pulse width limited by max. junction temperature.}
‚ Pulse width ≤ 400 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board
„ Typ = measured - Q_oss
…
Typical
values
of
R_DS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at V_GS = 5.0V, I_F = 15A.
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