IRF7811AVTRPBF Datasheet, PDF (4/6 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

IRF7811AVPbF
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
1000
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
50 u
8V
5 uH
125nS
Repetition rate:100Hz
Schottky -6A
450
50 u
VDD
16Vz500mW
V _ds
90%
Mic4452BM
450
50 Ohms probe
10%
V_gs
t _d(on)
t _f(v)
t _d(off)
t _r(v)
Switching Time Waveforms
Figure 8. Clamped Inductive load test diagram and switching waveform
4
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