IRF7754GPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

IRF7754GPbF
3200
2800
2400
2000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
1200
800
400
Coss
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
I_D = -5.4A
5
V _DS= -9.6V
V _DS= -6V
4
3
2
1
0
0
5
10
15
20
25
30
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25°C
0.1
0.2
V _GS = 0 V
0.4
0.6
0.8
1.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
1ms
10ms
T_C= 25 °C
T_J = 150 °C
Single Pulse
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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