IRF7754GPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the ruggedized device design, that International Rectifier
is well known for, provides thedesigner with an extremely
efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the
standard SO-8. This makes the TSSOP-8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.2mm) allows it to fit easily into extremely
thin environments such as portable electronics and PCMCIA
cards.
PD- 96152A
IRF7754GPbF
HEXFET^® Power MOSFET
V_DSS
-12V
R_DS(on) max
25mΩ@V_GS = -4.5V
34mΩ@V_GS = -2.5V
49mΩ@V_GS = -1.8V
I_D
-5.4A
-4.6A
-3.9A
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TSSOP-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-5.5
-4.4
-22
1
0.64
0.01
±8
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
125
Units
°C/W
1
05/14/09