IRF7751GPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

IRF7751GPbF
4000
3200
2400
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1600
800
0
1
C_oss
C_rss
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
14 _{ID = -4.5A}
12
10
V_DS=-24V
V_DS=-15V
8
6
4
2
0
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
T_J = 25°C
1
0.1
0.2
V _GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C= 25 °C
T_J = 150 °C
Single Pulse
0.1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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