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IRF7751GPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance | |||
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IRF7751GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
-30 âââ âââ
âââ 0.020 âââ
âââ âââ 35
ÂÂÂ âââ 55
-1.0 âââ -2.5
V
V/°C
mâ¦
V
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -4.5A Â
VGS = -4.5V, ID = -3.8A Â
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.8 âââ âââ S VDS = -10V, ID = -4.5A
IDSS
Drain-to-Source Leakage Current
âââ âââ -15
âââ âââ -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -20V
âââ âââ 100
VGS = 20V
Qg
Total Gate Charge
âââ 29 44
ID = -4.5A
Qgs
Gate-to-Source Charge
âââ 5.5 âââ nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 5.0 âââ
âââ 13 20
VGS = -10V
VDD = -15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 16 24 ns ID = -1.0A
âââ 155 233
RG = 6.0â¦
âââ 80 120
VGS = -10VÂ
Ciss
Input Capacitance
âââ 1464 âââ
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 227 âââ pF VDS = -25V
âââ 146 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
ÂÂÂ
ÂÂÂ
âââ
âââ
âââ
Typ. Max.
ÂÂÂ -1.0
ÂÂÂ -18
âââ -1.2
23 35
19 28
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V Â
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t < 10 sec.
2
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