IRF7706GPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7706GPbF
3200
2800
2400
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1600
1200
800
400
0
1
C_oss
C_rss
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
16 _{ID = -7.0A}
14
12
V _DS= -24V
V _DS= -15V
10
8
6
4
2
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25°C
0.1
0.2
V _GS = 0 V
0.5
0.8
1.1
1.4
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
0.1
1
10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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