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IRF7706GPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET
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IRF7706GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– –––
––– 0.015 –––
––– ––– 22
––– ––– 36
V
V/°C
mΩ
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -7.0A ‚
VGS = -4.5V, ID = -5.6A ‚
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
6.9 ––– ––– S VDS = -10V, ID = -7.0A
IDSS
Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 48 72
ID = -7.0A
Qgs
Gate-to-Source Charge
––– 8.5 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 8.4 –––
––– 17 25
VGS = -10V
VDD = -15V, VGS = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 46 69 ns ID = -1.0A
––– 244 366
RG = 6.0Ω
––– 122 183
RD = 15Ω ‚
Ciss
Input Capacitance
––– 2211 –––
VGS = 0V
Coss
Output Capacitance
––– 339 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 207 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -1.5
showing the
A integral reverse
G
––– ––– -28
p-n junction diode.
S
––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V ‚
––– 34 51
––– 32 48
ns TJ = 25°C, IF = -1.5A
nC di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10sec.
2
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